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Updated: Apr 6, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Voltage and Dopant Concentration Measurements of Semiconductors using a Band-Pass Toroidal Energy Analyzer Inside a
Avinash Srinivasan1, Anjam Khursheed1
1Department of Electrical and Computer Engineering,Centre for Integrated Circuit Failure Analysis and Reliability (CICFAR),National University of Singapore,Singapore.
Abstract:
This paper presents experimental results obtained from a scanning electron microscope (SEM) second-order focusing toroidal electron energy analyzer attachment. The results demonstrate that the analyzer can be used to obtain high signal-to-noise voltage and dopant concentration measurements on semiconductors in the presence of different electric field conditions at the sample. The experimentally calculated relative error of measurement typically varies from 31 to 63, corresponding to secondary electron (SE) signal mean shifts of 9-18 mV. The millivolt accuracy of these results is over one order of magnitude better than earlier quantitative dopant concentration measurements made by a retarding field analyzer.
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