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Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages
Published on: April 13, 2016
Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)
Wen-Wei Shen1, Kuan-Neng Chen2
1Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan.
Abstract:
3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.
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