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MoTe2 Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering
Rui Ma1, Huairuo Zhang2,3, Youngdong Yoo4
1Department of Electrical and Computer Engineering , University of Minnesota , Minneapolis , Minnesota 55455 , United States.
ACS Nano
|June 28, 2019
Summary
Researchers developed novel molybdenum ditelluride (MoTe2) field-effect transistors (FETs) using lateral homojunctions. This approach significantly reduces contact resistance, enhancing performance for future electronic circuits.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Transition-metal dichalcogenides (TMDCs) exhibit coexisting metallic and semiconducting phases.
- Large contact resistance is a major challenge in TMDC-based field-effect transistors (FETs).
Purpose of the Study:
- To investigate the structural and electrical properties of in situ-grown lateral 2H/1T' MoTe2 homojunctions.
- To demonstrate the effectiveness of 1T' MoTe2 as electrodes for reducing contact resistance in MoTe2 FETs.
Main Methods:
- Flux-controlled phase engineering for selective synthesis of MoTe2 polymorphs.
- Atomic-resolution transmission electron microscopy (TEM) for structural analysis.
- Transfer length method (TLM) for contact resistance extraction.
- Temperature- and gate-voltage-dependent transport measurements.
Main Results:
- Near-single-crystalline 2H-MoTe2 regions were observed growing from a polycrystalline 1T'-MoTe2 matrix.
- MoTe2 FETs with 1T' contacts exhibited significantly reduced contact resistance (470 ± 30 Ω·μm).
- A low flat-band barrier height (∼30 ± 10 meV) at the 2H/1T' interface was measured, showing improved gate modulation compared to Schottky barriers.
Conclusions:
- In situ-grown lateral 2H/1T' MoTe2 homojunctions effectively address contact resistance issues in MoTe2 FETs.
- The 1T' phase serves as an excellent electrode material, enhancing device performance.
- Understanding these homojunction properties is crucial for developing MoTe2-based logic and memory circuits.
Keywords:
MoTeSchottky barrier heightchemical vapor depositionlateral homojunctionphase engineeringtransition-metal dichalcogenideMore Related Videos
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