Probing Charge Dynamics in Diamond with an Individual Color Center

Area of Science:

• Solid-state physics
• Quantum information science
• Materials science

Background:

• Precise control over color center charge states is crucial for advancing quantum technologies.
• Microscopic charge dynamics in wide-band-gap semiconductors, particularly deep defects, remain poorly understood.
• Understanding these dynamics is essential for designing robust quantum devices.

Purpose of the Study:

• To probe the charge dynamics of defects surrounding an individual nitrogen-vacancy (NV) center in diamond.
• To investigate the optical charge conversion mechanisms of silicon-vacancy (SiV) centers.
• To provide evidence for the specific charge state of the SiV center under optical illumination.

Main Methods:

• Employed single-shot charge-state readout of an individual NV center.
• Utilized optical illumination of distant defects to generate charge carriers (holes).
• Observed the effect of these generated holes on the NV center's charge state and studied SiV center optical charge conversion.

Main Results:

• Demonstrated that optical illumination of remote defects can alter the NV center's charge state via captured holes.
• Investigated the optical charge conversion of SiV centers.
• Provided evidence that the SiV center's dark state under optical illumination is the SiV^2- charge state.

Conclusions:

• Charge carrier generation, transport, and capture are critical factors in designing and implementing quantum devices utilizing color centers.
• The study presents a novel method for probing and controlling charge dynamics in diamond.
• This work enhances the understanding of defect behavior in diamond for quantum applications.