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Updated: Sep 2, 2025
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Characterization of Anisotropic Leaky Mode Modulators for Holovideo
Published on: March 19, 2016
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On-chip low-loss all-optical MoSe2 modulator.
Optics Letters
|August 1, 2022
Summary
A new model quantifies all-optical modulators based on transition metal dichalcogenides (TMDCs). This MoSe2 modulator shows low switching energy and high extinction ratios for next-generation photonic devices.
Area of Science:
- Materials Science
- Photonics
- Condensed Matter Physics
Background:
- Monolayer transition metal dichalcogenides (TMDCs) possess unique optoelectronic properties.
- These properties include direct bandgaps, strong spin-orbit coupling, and exciton-polariton interactions.
- Harnessing these properties is key for advanced photonic devices like modulators.
Purpose of the Study:
- To develop a model for all-optical control mechanisms in TMDCs.
- To quantify the performance of a waveguide-integrated all-optical MoSe2 modulator.
Main Methods:
- A simple model was proposed to quantify modulator performance.
- Simulations were conducted for a 35-μm-long Si3N4 waveguide-integrated MoSe2 modulator.
Main Results:
- A switching energy of 14.6 pJ was achieved for TM and TE pump signals at 480 nm.
- Maximal extinction ratios of 20.6 dB (TM) and 20.1 dB (TE) were obtained for probe signals at 500 nm.
- Ultra-low insertion loss (<0.3 dB) and ultrafast recovery time (50 ps) were demonstrated.
Conclusions:
- The proposed model effectively quantifies all-optical modulator performance in TMDCs.
- The MoSe2 modulator exhibits excellent performance metrics for practical applications.
- Findings facilitate the design of novel TMDC-based photonic devices.
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