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Related Concept Videos

P-N junction01:11

P-N junction

681
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
681
Biasing of P-N Junction01:16

Biasing of P-N Junction

862
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
862
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

507
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
507
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

332
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
332
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

919
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
919
Non-ohmic Devices00:51

Non-ohmic Devices

1.2K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.2K

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Updated: Sep 11, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
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Sn-InAs Nanowire Shadow-Defined Josephson Junctions.

Amritesh Sharma1, An-Hsi Chen2, Connor P Dempsey3

  • 1Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States.

Nano Letters
|August 15, 2025
PubMed
Summary
This summary is machine-generated.

We developed a novel hybrid superconductor-semiconductor platform using inclined InAs nanowires coated with β-Sn shells. This enables the creation of robust Josephson junctions for advanced quantum technologies.

Keywords:
Hybrid superconductor-semiconductorsInAsJosephson junctionssuperconducting proximity effectβ-Sn

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Area of Science:

  • Quantum Information Science
  • Condensed Matter Physics
  • Materials Science

Background:

  • Hybrid superconductor-semiconductor platforms are crucial for quantum information technologies.
  • Integration of materials requires clean interfaces, robust superconductivity, and scalable architectures.

Purpose of the Study:

  • To synthesize and analyze inclined InAs nanowires conformally coated with β-Sn shells.
  • To establish a self-aligned, criss-cross network for deterministic Josephson junction formation.
  • To investigate the potential of this platform for quantum devices and exotic superconducting phases.

Main Methods:

  • Synthesis of inclined InAs nanowires.
  • Conformal coating with β-Sn shells via angle-controlled, low-temperature deposition.
  • Structural characterization (e.g., SEM, TEM) and low-temperature transport measurements.

Main Results:

  • Formation of a self-aligned, criss-cross nanowire network.
  • Deterministic fabrication of nanowire-shadow Josephson junctions.
  • Observation of a hard induced superconducting gap (~600 μeV), high switching currents (~500 nA), and magnetic field resilience (>1T).

Conclusions:

  • β-Sn/InAs nanowire networks offer a promising platform for superconducting qubits and low-noise microwave devices.
  • This platform facilitates the exploration of triplet pairing and topological superconductivity.
  • The developed method enables scalable architectures for future quantum information processing.