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Nature Communications|January 3, 2024
Ultrashort vertical-channel MoS2 transistor using a self-aligned contactLiting Liu, Yang Chen, Long Chen, et al.
ACS Nano|August 15, 2022
Strain Releasing of Flexible 2D Electronics through van der Waals Sliding ContactZhiwei Li, Yang Chen, Songlong Liu, et al.
Nano Letters|January 5, 2024
Edge-by-Edge Lateral Heterostructure through Interfacial SlidingZhiwei Li, Longbin Zhang, Songlong Liu, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|August 8, 2023
High-Density Vertical Transistors with Pitch Size Down to 20 nmZhaojing Xiao, Liting Liu, Yang Chen, et al.
Nano Letters|March 27, 2025
van der Waals Lamination for Effective Bottom Channel Modulation of Oxide TransistorsXiaokun Yang, Donglin Lu, Rui He, et al.
Nature Communications|April 24, 2023
Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integrationZheyi Lu, Yang Chen, Weiqi Dang, et al.
Small Methods|April 9, 2026
Manipulating MoS2 Thickness On-Chip via Van Der Waals DelaminationZehao Li, Yunxin Li, Xiao Liu, et al.
ACS Nano|December 28, 2023
Ag-Assisted Dry Exfoliation of Large-Scale and Continuous 2D MonolayersShuimei Ding, Chang Liu, Zhiwei Li, et al.
Nature|May 22, 2024
Monolithic three-dimensional tier-by-tier integration via van der Waals laminationDonglin Lu, Yang Chen, Zheyi Lu, et al.
Nature Communications|September 3, 2024
Large-scale sub-5-nm vertical transistors by van der Waals integrationXiaokun Yang, Rui He, Zheyi Lu, et al.
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