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Nano Convergence
|
February 28, 2024
Electrochemical random-access memory: recent advances in materials, devices, and systems towards neuromorphic computing
Hyunjeong Kwak, Nayeon Kim, Seonuk Jeon, et al.
Nanomaterials (Basel, Switzerland)
|
January 22, 2024
Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation
Hyejin Kim, Geonhui Han, Seojin Cho, et al.
Nanotechnology
|
January 23, 2025
Interface effect based nano-scale TiO<sub></sub>vertical synapse device for high-density integration in neuromorphic computing system
Seojin Cho, Geonhui Han, Chuljun Lee, et al.
Frontiers in Neuroscience
|
July 18, 2022
Linear Frequency Modulation of NbO<sub>2</sub>-Based Nanoscale Oscillator With Li-Based Electrochemical Random Access Memory for Compact Coupled Oscillatory Neural Network
Donguk Lee, Myonghoon Kwak, Jongwon Lee, et al.
Nanoscale Research Letters
|
August 13, 2014
Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory
Sangheon Lee, Jiyong Woo, Daeseok Lee, et al.
Scientific Reports
|
December 19, 2025
Role of the channel on the memory window of HfZrO<sub>x</sub> ferroelectric field-effect transistors with p-type Si-doped InZnO<sub>x</sub> channel
Hyoungjin Park, Seokjae Lim, Somi Lee, et al.
Scientific Reports
|
August 31, 2023
Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device
Hyejin Kim, Jongseon Seo, Seojin Cho, et al.
Journal of Nanoscience and Nanotechnology
|
August 4, 2016
Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAM
Jeonghwan Song, Daeseok Lee, Jiyong Woo, et al.
ACS Applied Materials & Interfaces
|
May 29, 2026
TiON/NiO<i><sub>x</sub></i> Heterojunction Neuron for CMOS-Compatible Hardware Implementation of Activation Function in Neural Network
Sion Kim, Minsu Kang, Yuna Kim, et al.
Scientific Reports
|
February 29, 2024
Strategy to improve synaptic behavior of ion-actuated synaptic transistors-the use of ion blocking layer to improve state retention
Seonuk Jeon, Nir Tessler, Nayeon Kim, et al.
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Search research articles
Search
Showing results (1-10 of 27) with videos related to
Sort By:
Page
of 3
Nano Convergence
|
February 28, 2024
Electrochemical random-access memory: recent advances in materials, devices, and systems towards neuromorphic computing
Hyunjeong Kwak, Nayeon Kim, Seonuk Jeon, et al.
Nanomaterials (Basel, Switzerland)
|
January 22, 2024
Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation
Hyejin Kim, Geonhui Han, Seojin Cho, et al.
Nanotechnology
|
January 23, 2025
Interface effect based nano-scale TiO<sub></sub>vertical synapse device for high-density integration in neuromorphic computing system
Seojin Cho, Geonhui Han, Chuljun Lee, et al.
Frontiers in Neuroscience
|
July 18, 2022
Linear Frequency Modulation of NbO<sub>2</sub>-Based Nanoscale Oscillator With Li-Based Electrochemical Random Access Memory for Compact Coupled Oscillatory Neural Network
Donguk Lee, Myonghoon Kwak, Jongwon Lee, et al.
Nanoscale Research Letters
|
August 13, 2014
Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory
Sangheon Lee, Jiyong Woo, Daeseok Lee, et al.
Scientific Reports
|
December 19, 2025
Role of the channel on the memory window of HfZrO<sub>x</sub> ferroelectric field-effect transistors with p-type Si-doped InZnO<sub>x</sub> channel
Hyoungjin Park, Seokjae Lim, Somi Lee, et al.
Scientific Reports
|
August 31, 2023
Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device
Hyejin Kim, Jongseon Seo, Seojin Cho, et al.
Journal of Nanoscience and Nanotechnology
|
August 4, 2016
Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAM
Jeonghwan Song, Daeseok Lee, Jiyong Woo, et al.
ACS Applied Materials & Interfaces
|
May 29, 2026
TiON/NiO<i><sub>x</sub></i> Heterojunction Neuron for CMOS-Compatible Hardware Implementation of Activation Function in Neural Network
Sion Kim, Minsu Kang, Yuna Kim, et al.
Scientific Reports
|
February 29, 2024
Strategy to improve synaptic behavior of ion-actuated synaptic transistors-the use of ion blocking layer to improve state retention
Seonuk Jeon, Nir Tessler, Nayeon Kim, et al.
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of 3