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Journal of Nanoscience and Nanotechnology|April 28, 2019
Design Optimization of InGaAs/GaAsSb-Based <i>P</i>-Type Gate-All-Around Arch-Shaped Tunneling Field-Effect TransistorBo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, et al.Journal of Women'S Health (2002)|January 11, 2017
Association Between Duration of Breast Feeding and Metabolic Syndrome: The Korean National Health and Nutrition Examination SurveysSe Rin Choi, Yong Min Kim, Min Su Cho, et al.Journal of Nanoscience and Nanotechnology|April 28, 2019
Capacitorless One-Transistor Dynamic Random-Access Memory Based on Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with Si/SiGe Heterojunction and Underlap Structure for Improvement of Sensing Margin and Retention TimeYoung Jun Yoon, Min Su Cho, Bo Gyeong Kim, et al.Journal of Nanoscience and Nanotechnology|April 28, 2019
Effect of Interface Traps on the Device Performance of InGaAs-Based Gate-All-Around Tunneling Field-Effect TransistorsWon Douk Jang, Young Jun Yoon, Min Su Cho, et al.Journal of Nanoscience and Nanotechnology|April 28, 2019
Analysis of Electrical Characteristics of InAlGaN/GaN-Based High Electron Mobility Transistors with AlGaN Back BarriersJun Hyeok Jung, Young Jun Yoon, Min Su Cho, et al.Korean Journal of Anesthesiology|November 5, 2014
Volume-controlled versus pressure-controlled ventilation-volume guaranteed mode during one-lung ventilationSeok Young Song, Jin Yong Jung, Min-Su Cho, et al.Journal of Nanoscience and Nanotechnology|March 5, 2020
Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO₂/SiNJun Hyeok Jung, Min Su Cho, Won Douk Jang, et al.Journal of Nanoscience and Nanotechnology|April 28, 2019
Simulation for Electrical Performances of the Capacitorless Dynamic Random Access Memory Based on Junctionless FinFETsMin Su Cho, Young Jun Yoon, Bo Gyeong Kim, et al.Journal of Radiation Research|August 4, 2012
Cytogenetic biodosimetry for Fukushima travelers after the nuclear power plant accident: no evidence of enhanced yield of dicentricsJin Kyung Lee, Eun-Ae Han, Seung-Sook Lee, et al.Journal of Nanoscience and Nanotechnology|April 22, 2018
Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless TransistorBo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, et al.Pageof 3