Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Sangwan Kim

Showing results (11-20 of 43) with videos related to

Pageof 5
Sort By:
Journal of Nanoscience and Nanotechnology|April 28, 2019
Transient Analysis of Tunnel Field-Effect Transistor with Raised DrainJang Hyun Kim, Hyun Woo Kim, Seong-Su Shin, et al.
International Journal of Surgery (London, England)|October 29, 2024
Robot-assisted kidney transplantation: a propensity score-matched cohort analysis of early experienceSeung J J Kim, Sangwan Kim, Ara Cho, et al.
Journal of Nanoscience and Nanotechnology|April 28, 2019
Nonvolatile Memory (NVM) Operation of Tunnel Field-Effect Transistor (TFET) Using Ferroelectric HfO₂ SidewallRyoongbin Lee, Kitae Lee, Sihyun Kim, et al.
Journal of Nanoscience and Nanotechnology|June 30, 2018
A 1T Dynamic Random Access Memory Cell Based on Gated Thyristor with Surrounding Gate Structure for High Scalability (Journal of Nanoscience and Nanotechnology, Vol. 18(9), pp. 5919-5924 (2018))Hyungjin Kim, Sihyun Kim, Hyun-Min Kim, et al.
Journal of Nanoscience and Nanotechnology|April 22, 2018
A 1T Dynamic Random Access Memory Cell Based on Gated Thyristor with Surrounding Gate Structure for High ScalabilityHyungjin Kim, Sihyun Kim, Hyun-Min Kim, et al.
Journal of Nanoscience and Nanotechnology|January 24, 2020
Surrounding Channel Nanowire Tunnel Field-Effect Transistor with Dual Gate to Reduce a Hump PhenomenonYe Sung Kwon, Seong-Hyun Lee, Yoon Kim, et al.
Micromachines|November 14, 2019
F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power ApplicationSeunghyun Yun, Jeongmin Oh, Seokjung Kang, et al.
Journal of Nanoscience and Nanotechnology|January 24, 2020
I-Shaped SiGe Fin Tunnel Field-Effect Transistor with High <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> RatioRyoongbin Lee, Junil Lee, Kitae Lee, et al.
DNA Research : an International Journal for Rapid Publication of Reports on Genes and Genomes|April 11, 2013
Robustness of gut microbiota of healthy adults in response to probiotic intervention revealed by high-throughput pyrosequencingSeok-Won Kim, Wataru Suda, Sangwan Kim, et al.
Journal of Nanoscience and Nanotechnology|January 24, 2020
Analysis of Channel Area Fluctuation Effects of Gate-All-Around Tunnel Field-Effect TransistorSeok Jung Kang, Jeong-Uk Park, Kyung Jin Rim, et al.
Pageof 5

Showing results (11-20 of 43) with videos related to

Sort By:
Pageof 5
Journal of Nanoscience and Nanotechnology|April 28, 2019
Transient Analysis of Tunnel Field-Effect Transistor with Raised DrainJang Hyun Kim, Hyun Woo Kim, Seong-Su Shin, et al.
International Journal of Surgery (London, England)|October 29, 2024
Robot-assisted kidney transplantation: a propensity score-matched cohort analysis of early experienceSeung J J Kim, Sangwan Kim, Ara Cho, et al.
Journal of Nanoscience and Nanotechnology|April 28, 2019
Nonvolatile Memory (NVM) Operation of Tunnel Field-Effect Transistor (TFET) Using Ferroelectric HfO₂ SidewallRyoongbin Lee, Kitae Lee, Sihyun Kim, et al.
Journal of Nanoscience and Nanotechnology|June 30, 2018
A 1T Dynamic Random Access Memory Cell Based on Gated Thyristor with Surrounding Gate Structure for High Scalability (Journal of Nanoscience and Nanotechnology, Vol. 18(9), pp. 5919-5924 (2018))Hyungjin Kim, Sihyun Kim, Hyun-Min Kim, et al.
Journal of Nanoscience and Nanotechnology|April 22, 2018
A 1T Dynamic Random Access Memory Cell Based on Gated Thyristor with Surrounding Gate Structure for High ScalabilityHyungjin Kim, Sihyun Kim, Hyun-Min Kim, et al.
Journal of Nanoscience and Nanotechnology|January 24, 2020
Surrounding Channel Nanowire Tunnel Field-Effect Transistor with Dual Gate to Reduce a Hump PhenomenonYe Sung Kwon, Seong-Hyun Lee, Yoon Kim, et al.
Micromachines|November 14, 2019
F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power ApplicationSeunghyun Yun, Jeongmin Oh, Seokjung Kang, et al.
Journal of Nanoscience and Nanotechnology|January 24, 2020
I-Shaped SiGe Fin Tunnel Field-Effect Transistor with High <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> RatioRyoongbin Lee, Junil Lee, Kitae Lee, et al.
DNA Research : an International Journal for Rapid Publication of Reports on Genes and Genomes|April 11, 2013
Robustness of gut microbiota of healthy adults in response to probiotic intervention revealed by high-throughput pyrosequencingSeok-Won Kim, Wataru Suda, Sangwan Kim, et al.
Journal of Nanoscience and Nanotechnology|January 24, 2020
Analysis of Channel Area Fluctuation Effects of Gate-All-Around Tunnel Field-Effect TransistorSeok Jung Kang, Jeong-Uk Park, Kyung Jin Rim, et al.
Pageof 5