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Nanoscale Research Letters|February 12, 2021
Simulation and Performance Analysis of Dielectric Modulated Dual Source Trench Gate TFET BiosensorChen Chong, Hongxia Liu, Shulong Wang, et al.
Nanomaterials (Basel, Switzerland)|November 27, 2021
First-Principles Study on the Effect of Strain on Single-Layer Molybdenum DisulfideChen Chong, Hongxia Liu, Shulong Wang, et al.
Micromachines|July 27, 2022
Hybrid Nanowire-Rectangular Plasmonic Waveguide for Subwavelength Confinement at 1550 NmYindi Wang, Hongxia Liu, Shulong Wang, et al.
Nanotechnology|March 29, 2026
Electro-Thermal Reliability Analysis and Performance Evaluation of a 1.2-kV Cascode GaN HEMT for High-Power-Density ApplicationsChen Chong, Hongxia Liu, Shulong Wang, et al.
Micromachines|June 2, 2021
Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect TransistorsChen Chong, Hongxia Liu, Shulong Wang, et al.
Nanoscale Research Letters|March 7, 2018
The Optimization of Spacer Engineering for Capacitor-Less DRAM Based on the Dual-Gate Tunneling TransistorWei Li, Hongxia Liu, Shulong Wang, et al.
Nanomaterials (Basel, Switzerland)|September 5, 2019
A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier ReductionKun Yang, Hongxia Liu, Shulong Wang, et al.
Micromachines|June 27, 2019
Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si HeterojunctionTao Han, Hongxia Liu, Shupeng Chen, et al.
Nanoscale Research Letters|September 7, 2017
The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFETWei Li, Hongxia Liu, Shulong Wang, et al.
Micromachines|September 28, 2021
Preparation and Research of Monolayer WS2 FETs Encapsulated by h-BN MaterialTao Han, Hongxia Liu, Shupeng Chen, et al.
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