The InN epitaxy via controlling In bilayer

Area of Science:

• Materials Science
• Semiconductor Physics
• Thin Film Growth

Background:

• Indium Nitride (InN) is a promising semiconductor material.
• Theoretical advantages of In-bilayer pre-deposition and nitridation for InN growth exist.
• Experimental validation of these methods is needed.

Purpose of the Study:

• To experimentally investigate the In-bilayer pre-deposition and nitridation method for InN film growth.
• To determine the optimal conditions for trimethylindium (TMIn) pulse times.
• To optimize the nitridation process for enhanced InN film quality.

Main Methods:

• Metalorganic Vapor Phase Epitaxy (MOVPE) was employed.
• Varied pulse times of trimethylindium (TMIn) supply were used to control In bilayer thickness.
• The nitridation process using ammonia (NH3) flow was tuned.

Main Results:

• InN film quality improved as the top indium layer thickness approached a bilayer.
• A moderate, stable, and slow nitridation process using NH3 flow further enhanced InN quality.
• Improved film flatness correlated with gradual relaxation of biaxial strain in the InN film.

Conclusions:

• Optimized In-bilayer pre-deposition is crucial for high-quality InN films.
• Controlled nitridation is essential for achieving superior InN film characteristics.
• The study provides experimental insights into optimizing InN growth via MOVPE.