Design of compact and low-loss S-bends by CMA-ES

We employ the covariance matrix adaptation evolution strategy (CMA-ES) algorithm to design compact and low-loss S-bends on the standard silicon-on-insulator platform. In line with the CMA-ES-based approach, we present experimental results demonstrating insertion losses of 0.041 dB, 0.025 dB, and 0.011 dB for S-bends with sizes of 3.5 µm, 4.5 µm, and 5.5 µm, respectively, which are the lowest insertion losses within the footprint range smaller than approximately 30 µm². These outcomes underscore the remarkable performance and adaptability of the CMA-ES to design Si photonics devices tailored for high-density photonic integrated circuits.