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Balancing the Efficiency and Sensitivity of Defect Inspection of Non-Patterned Wafers with TDI-Based Dark-Field
Fei Yu1, Min Xu1, Junhua Wang1,2
1Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, School of Information Science and Technology, Fudan University, Shanghai 200438, China.
This study integrates time delay integration (TDI) technology into dark-field microscopy for semiconductor wafer inspection. The enhanced system improves defect detection signal-to-noise ratio without compromising inspection efficiency.
Area of Science:
- Semiconductor Manufacturing
- Optical Inspection Technologies
- Integrated Circuit Quality Control
Background:
- Defect inspection is critical in semiconductor manufacturing for high-quality integrated circuits.
- Achieving high efficiency and sensitivity simultaneously in wafer inspection presents a significant challenge due to their inherent constraints.
Purpose of the Study:
- To develop an improved method for defect inspection in non-patterned semiconductor wafer production lines.
- To achieve a better trade-off between detection efficiency and sensitivity in wafer defect detection.
Main Methods:
- Integration of time delay integration (TDI) technology into dark-field microscopy.
- Utilization of a TDI image sensor for multi-point simultaneous scanning, replacing traditional photomultiplier tubes.
Main Results:
- The proposed method effectively improves the signal-to-noise ratio for detecting particle defects.
- Increased TDI stages and reduced column fixed pattern noise contribute to enhanced defect signal detection.
- Detection efficiency is maintained without sacrifice, achieving the desired trade-off.
Conclusions:
- The integration of TDI technology in dark-field microscopy offers a viable solution for enhancing defect inspection in semiconductor manufacturing.
- This approach provides a practical method to balance sensitivity and efficiency, crucial for high-volume production lines.
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