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High-Sensitivity Defect Inspection for Unpatterned Wafers via Integrating Dark-Field Scattering and Diffraction Phase

Xiangchao Zhang1,2, Qianru Zheng2, Di Li3

  • 1Jianghuai Advanced Technology Center, Hefei 230088, China.

Sensors (Basel, Switzerland)
|February 27, 2026
PubMed
Summary
This summary is machine-generated.

A new dual-channel optical inspection system combines dark-field scattering and diffraction phase microscopy for sensitive wafer defect detection. This advanced technique improves sensitivity and reliability for semiconductor manufacturing.

Keywords:
dark field scatteringdefect detectiondiffraction phase microscopywafer inspection

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Area of Science:

  • Semiconductor Manufacturing
  • Optical Metrology
  • Materials Science

Background:

  • Conventional wafer defect inspection methods lack sufficient sensitivity and reliability.
  • Advanced semiconductor manufacturing demands higher precision in defect detection.

Purpose of the Study:

  • To develop a novel dual-channel optical inspection system for enhanced wafer defect characterization.
  • To improve the sensitivity and reliability of defect detection in unpatterned wafers.

Main Methods:

  • Integration of dark-field scattering and diffraction phase microscopy into a single system.
  • Simultaneous acquisition of dark-field intensity and phase gradient signals from defects.
  • Experimental validation using polystyrene particles for limit of detection assessment.

Main Results:

  • Achieved a limit of detection of 60 nm for wafer defects.
  • Demonstrated improved sensitivity compared to single dark-field scattering systems.
  • Maintained detection limits for small-scale defects in both lateral and vertical dimensions.

Conclusions:

  • The proposed dual-channel system offers high sensitivity and reliability for unpatterned wafer defect inspection.
  • This technology meets the stringent requirements of advanced semiconductor manufacturing.
  • The integrated approach enables comprehensive defect characterization at the nanoscale.