Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Chih-Hwan Yang

Showing results (1-10 of 21) with videos related to

Pageof 3
Sort By:
Nanotechnology|September 13, 2014
Charge offset stability in Si single electron devices with Al gatesNeil M Zimmerman, Chih-Hwan Yang, Nai Shyan Lai, et al.
Nano Letters|October 27, 2020
Single-Electron Operation of a Silicon-CMOS 2 × 2 Quantum Dot Array with Integrated Charge SensingWill Gilbert, Andre Saraiva, Wee Han Lim, et al.
Nano Letters|May 17, 2021
A High-Sensitivity Charge Sensor for Silicon Qubits above 1 KJonathan Yue Huang, Wee Han Lim, Ross C C Leon, et al.
Nature Nanotechnology|March 13, 2019
Gate-based single-shot readout of spins in siliconAnderson West, Bas Hensen, Alexis Jouan, et al.
Nature Nanotechnology|December 11, 2019
A silicon quantum-dot-coupled nuclear spin qubitBas Hensen, Wister Wei Huang, Chih-Hwan Yang, et al.
Science Advances|August 14, 2021
Single-electron spin resonance in a nanoelectronic device using a global fieldEnsar Vahapoglu, James P Slack-Smith, Ross C C Leon, et al.
Scientific Reports|April 1, 2025
Wavelet correlation noise analysis for qubit operation variable time seriesAmanda E Seedhouse, Nard Dumoulin Stuyck, Santiago Serrano, et al.
Nature Communications|May 29, 2021
Bell-state tomography in a silicon many-electron artificial moleculeRoss C C Leon, Chih Hwan Yang, Jason C C Hwang, et al.
Nature Communications|September 3, 2024
Entangling gates on degenerate spin qubits dressed by a global fieldIngvild Hansen, Amanda E Seedhouse, Santiago Serrano, et al.
Nano Letters|June 16, 2025
A 2 × 2 Quantum Dot Array in Silicon with Fully Tunable Pairwise Interdot CouplingWee Han Lim, Tuomo Tanttu, Tony Youn, et al.
Pageof 3

Showing results (1-10 of 21) with videos related to

Sort By:
Pageof 3
Nanotechnology|September 13, 2014
Charge offset stability in Si single electron devices with Al gatesNeil M Zimmerman, Chih-Hwan Yang, Nai Shyan Lai, et al.
Nano Letters|October 27, 2020
Single-Electron Operation of a Silicon-CMOS 2 × 2 Quantum Dot Array with Integrated Charge SensingWill Gilbert, Andre Saraiva, Wee Han Lim, et al.
Nano Letters|May 17, 2021
A High-Sensitivity Charge Sensor for Silicon Qubits above 1 KJonathan Yue Huang, Wee Han Lim, Ross C C Leon, et al.
Nature Nanotechnology|March 13, 2019
Gate-based single-shot readout of spins in siliconAnderson West, Bas Hensen, Alexis Jouan, et al.
Nature Nanotechnology|December 11, 2019
A silicon quantum-dot-coupled nuclear spin qubitBas Hensen, Wister Wei Huang, Chih-Hwan Yang, et al.
Science Advances|August 14, 2021
Single-electron spin resonance in a nanoelectronic device using a global fieldEnsar Vahapoglu, James P Slack-Smith, Ross C C Leon, et al.
Scientific Reports|April 1, 2025
Wavelet correlation noise analysis for qubit operation variable time seriesAmanda E Seedhouse, Nard Dumoulin Stuyck, Santiago Serrano, et al.
Nature Communications|May 29, 2021
Bell-state tomography in a silicon many-electron artificial moleculeRoss C C Leon, Chih Hwan Yang, Jason C C Hwang, et al.
Nature Communications|September 3, 2024
Entangling gates on degenerate spin qubits dressed by a global fieldIngvild Hansen, Amanda E Seedhouse, Santiago Serrano, et al.
Nano Letters|June 16, 2025
A 2 × 2 Quantum Dot Array in Silicon with Fully Tunable Pairwise Interdot CouplingWee Han Lim, Tuomo Tanttu, Tony Youn, et al.
Pageof 3