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Nanophotonics (Berlin, Germany)
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April 11, 2025
One million quality factor integrated ring resonators in the mid-infrared
Marko Perestjuk, Rémi Armand, Miguel Gerardo Sandoval Campos, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
February 5, 2017
SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters
Nils von den Driesch, Daniela Stange, Stephan Wirths, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
June 26, 2018
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers
Nils von den Driesch, Daniela Stange, Denis Rainko, et al.
Nature Communications
|
January 24, 2025
Gate- and flux-tunable sin(2φ) Josephson element with planar-Ge junctions
Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz, et al.
Optics Express
|
June 11, 2024
Low-loss SiGe waveguides for mid-infrared photonics fabricated on 200 mm wafers
Victor Turpaud, Thi-Hao-Nhi Nguyen, Hamza Dely, et al.
ACS Applied Materials & Interfaces
|
December 23, 2014
High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors
Stephan Wirths, Daniela Stange, Maria-Angela Pampillón, et al.
Optics Express
|
October 19, 2017
Rotated echoes of molecular alignment: fractional, high order and imaginary
Kang Lin, Junyang Ma, Xiaochun Gong, et al.
Optics Express
|
October 19, 2017
Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction
Léopold Virot, Daniel Benedikovic, Bertrand Szelag, et al.
Nature Communications
|
December 3, 2024
Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors
Lukas Seidel, Teren Liu, Omar Concepción, et al.
Light, Science & Applications
|
November 17, 2021
GeSnOI mid-infrared laser technology
Binbin Wang, Emilie Sakat, Etienne Herth, et al.
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of 4
Search research articles
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Showing results (31-40 of 40) with videos related to
Sort By:
Page
of 4
You have reached the last page of results.
This site can display upto 40 results.
Nanophotonics (Berlin, Germany)
|
April 11, 2025
One million quality factor integrated ring resonators in the mid-infrared
Marko Perestjuk, Rémi Armand, Miguel Gerardo Sandoval Campos, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
February 5, 2017
SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters
Nils von den Driesch, Daniela Stange, Stephan Wirths, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
June 26, 2018
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers
Nils von den Driesch, Daniela Stange, Denis Rainko, et al.
Nature Communications
|
January 24, 2025
Gate- and flux-tunable sin(2φ) Josephson element with planar-Ge junctions
Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz, et al.
Optics Express
|
June 11, 2024
Low-loss SiGe waveguides for mid-infrared photonics fabricated on 200 mm wafers
Victor Turpaud, Thi-Hao-Nhi Nguyen, Hamza Dely, et al.
ACS Applied Materials & Interfaces
|
December 23, 2014
High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors
Stephan Wirths, Daniela Stange, Maria-Angela Pampillón, et al.
Optics Express
|
October 19, 2017
Rotated echoes of molecular alignment: fractional, high order and imaginary
Kang Lin, Junyang Ma, Xiaochun Gong, et al.
Optics Express
|
October 19, 2017
Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction
Léopold Virot, Daniel Benedikovic, Bertrand Szelag, et al.
Nature Communications
|
December 3, 2024
Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors
Lukas Seidel, Teren Liu, Omar Concepción, et al.
Light, Science & Applications
|
November 17, 2021
GeSnOI mid-infrared laser technology
Binbin Wang, Emilie Sakat, Etienne Herth, et al.
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of 4