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A Hershcovitch

Showing results (1-10 of 11) with videos related to

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The Review of Scientific Instruments|March 6, 2014
Gas feeding molecular phosphorous ion source for semiconductor implantersV I Gushenets, E M Oks, A S Bugaev, et al.
The Review of Scientific Instruments|March 3, 2012
Molecular phosphorus ion source for semiconductor technologyV I Gushenets, A S Bugaev, E M Oks, et al.
The Review of Scientific Instruments|November 29, 2023
Plasma window performance and scaling for an accelerator-based neutron sourceJ M Blatz, P Barrows, T Kile, et al.
The Review of Scientific Instruments|March 5, 2008
Experimental comparison of time-of-flight mass analysis with magnetic mass analysisV I Gushenets, A S Bugaev, E M Oks, et al.
The Review of Scientific Instruments|March 3, 2010
Boron ion source based on planar magnetron discharge in self-sputtering modeV I Gushenets, A Hershcovitch, T V Kulevoy, et al.
The Review of Scientific Instruments|March 3, 2010
Carborane beam from ITEP Bernas ion source for semiconductor implantersD Seleznev, G Kropachev, A Kozlov, et al.
The Review of Scientific Instruments|March 5, 2008
Bernas ion source discharge simulationI Roudskoy, T V Kulevoy, S V Petrenko, et al.
The Review of Scientific Instruments|March 6, 2014
Development of the ion source for cluster implantationT V Kulevoy, D N Seleznev, A V Kozlov, et al.
The Review of Scientific Instruments|March 3, 2016
Molecular ion sources for low energy semiconductor ion implantation (invited)A Hershcovitch, V I Gushenets, D N Seleznev, et al.
The Review of Scientific Instruments|March 5, 2008
Status of ITEP decaborane ion source programT V Kulevoy, S V Petrenko, R P Kuibeda, et al.
Pageof 2

Showing results (1-10 of 11) with videos related to

Sort By:
Pageof 2
The Review of Scientific Instruments|March 6, 2014
Gas feeding molecular phosphorous ion source for semiconductor implantersV I Gushenets, E M Oks, A S Bugaev, et al.
The Review of Scientific Instruments|March 3, 2012
Molecular phosphorus ion source for semiconductor technologyV I Gushenets, A S Bugaev, E M Oks, et al.
The Review of Scientific Instruments|November 29, 2023
Plasma window performance and scaling for an accelerator-based neutron sourceJ M Blatz, P Barrows, T Kile, et al.
The Review of Scientific Instruments|March 5, 2008
Experimental comparison of time-of-flight mass analysis with magnetic mass analysisV I Gushenets, A S Bugaev, E M Oks, et al.
The Review of Scientific Instruments|March 3, 2010
Boron ion source based on planar magnetron discharge in self-sputtering modeV I Gushenets, A Hershcovitch, T V Kulevoy, et al.
The Review of Scientific Instruments|March 3, 2010
Carborane beam from ITEP Bernas ion source for semiconductor implantersD Seleznev, G Kropachev, A Kozlov, et al.
The Review of Scientific Instruments|March 5, 2008
Bernas ion source discharge simulationI Roudskoy, T V Kulevoy, S V Petrenko, et al.
The Review of Scientific Instruments|March 6, 2014
Development of the ion source for cluster implantationT V Kulevoy, D N Seleznev, A V Kozlov, et al.
The Review of Scientific Instruments|March 3, 2016
Molecular ion sources for low energy semiconductor ion implantation (invited)A Hershcovitch, V I Gushenets, D N Seleznev, et al.
The Review of Scientific Instruments|March 5, 2008
Status of ITEP decaborane ion source programT V Kulevoy, S V Petrenko, R P Kuibeda, et al.
Pageof 2